Temperature dependent spectral response characteristic of III-V compound tandem cell

The GaInP/GaAs/Ge triple-junction tandem cells with a conversion efficiency of 27.1% were fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Temperature dependence of the spectral response measurements of the GaInP/GaAs/Ge tandem cell was performed by a quantum efficiency system at temperatures ranging from 25A degrees C to 160A degrees C. The red-shift phenomena of the absorption limit for all subcells were observed with increasing temperature, which is dued to the energy gap narrowing with temperature. The short-circuit current densities (J (sc)) of GaInP, GaAs and Ge subcells at room temperature calculated based on the spectral response data were 12.9, 13.7 and 17 mA/cm(2), respectively. The temperature coefficient of J (sc) for the tandem cell was determined to be 8.9 mu A/(cm(2) center dot A degrees C), and the corresponding temperature coefficient of the open-circuit voltage deduced from the series-connected model was -6.27 mV/A degrees C.

Observation of field-driven blue shift in delta-doped Si n-i-p-i multiple quantum wells

We report the observation of the field-driven blue shift at near absorption edge in the photo-current response spectra of delta-doped Si n-i-p-i multiple quantum wells due to the widening of the effective energy gap. This phenomenon differs from the observed results in GaAs/AlGaAs and GeSi/Si superlattices, because the physical mechanisms of forming energy band in these superlattice samples are different. Our experimental results are interpreted satisfactorily by the theoretical calculation. (C) 1999 Elsevier Science Ltd. All rights reserved.

Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers

Ionizing radiation response of partially-depleted MOS transistors fabricated in the, fluorinated SIMOX wafers has been investigated. The experimental data show that the, radiation-induced threshold voltage shift of PMOSFETs and NMOSFETs, as well as the radiation-induced increase of off-state leakage current of NMOSFETs can be restrained by implanting fluorine ions into the buried oxide of SIMOX wafers.

Optical response in a quantum dot superlattice nanoring under a lateral electric field

The optical absorption of a GaAs/AlGaAs quantum dot superlattice nanoring (QDSLNR) under a lateral dc electric field and with magnetic flux threading the ring is investigated. This structure and configuration provides a unique opportunity to study the optical response of a superlattice under an inhomogeneous electric field, which is not easily realized for general quantum well superlattices (QWSLs) but naturally realized for QDSLNRs under a homogeneous lateral electric field. It has been shown that a lateral dc electric field gives rise to a substantial change of the optical absorption spectra. Under a low field, the excitonic optical absorption is dominated by a 1s exciton. And with the electric field increasing, the optical absorption undergoes a transition from 1s excitonic absorption to 0 excitronic WSL absorption. (The number of 0, and -1 and +1 below are WSLs index.) The -1 and the +1 WSLs corresponding to the maximum effective field can also be identified. Due to the inhomogeneity of the electric field, the peaks of the -1 and the +1 WSLs are diminished and between them there exist rich and complicated structures. This is in contrast to the general QWSLs under a homogenous electric field. The complicated structures can be understood by considering the inhomogeneity of the electric field along the ring, which results in the nearest-neighbor transition, the next-nearest-neighbor transition, etc., have a different value repectively, at different sites along the ring. This may give rise to multiple WSLs. We have also shown that the line shape of the optical absorption is not sensitive to the threading magnetic flux. The threading magnetic flux only gives rise to a slight diamagnetic shift. Thus the enhancement of the sensitivity to the flux allowing for observation of the excitonic Aharanov-Bohm effect in the plain nanoring is not expected in QDSLNRs.

A STUDY OF THE SPECTRUM PROPERTIES AND THE PHOTOVOLTAGE RESPONSE OF NANOCRYSTALLINE ND2O3

The diffuse reflectance spectra of nanocrystalline Nd2O3 were measured in the ultraviolet-visible region, It is found that the part of f-->f transition bands were widened and red-shift occurred. The absorption tail-band in the region from 300 to 550 nm was assigned to the O-2p-->Nd-4f transition. The behavior of light-induced charge transfer and photovoltaic properties of nanocrystalline Nd2O3 were studied by the surface photovoltage spectroscopy (SPS) and electric field modulating SPS techniques. The SPS response shows two peaks at 330 nm(P-1) and 380 nm(P-2) in the UV-Vis range, The spectral features observed can be explained in terms of charge transfer and interband transition.

Response of coastal marine eco-environment to river fluxes into the sea: A case study of the Huanghe (Yellow) River mouth and adjacent waters

The impact of the Huanghe (Yellow) River outflows on its estuary was investigated with river gauging and shipboard hydrographic observations. The river flux has been decreasing dramatically; the discharges of water and sediment in the 1990s dropped to 27.4% and 31.9% of those in the 1950s, respectively, resulting in frequent and lengthy events of downstream channel dry-up since the 1970s. There were accumulatively 897 zero-flow days during the 1990s in the river course below the Lijin Hydrological Station, 100 km upstream from the river mouth, which is 82.4% of that in 1972. As freshwater input decreases, river-borne nutrients to the estuarine increased significantly. Concentration of dissolved inorganic nitrogen (DIN) in the 1990s was four times of that in 1950s. Changes in amount and content of the riverine inputs have greatly affected the estuarine ecosystem. Over the past several decades, sea surface temperature and salinity in the estuary and its adjacent waters increased and their distribution pattern altered in response to the reduction of freshwater inflow. The distribution of and seasonal succession in nutrient concentrations in the surface layer have also changed with a shift of river outlet and the decrease in riverine nutrient loads. Furthermore, deterioration of estuarine ecosystem by less river input has decreased primary productivity in the deltaic region waters, and in turn depressed the fishery. (C) 2008 Published by Elsevier Ltd.

A two-stage process with temperature-shift for enhanced anthocyanin production in strawberry cell suspension cultures

A two-stage process with temperature-shift has been developed to enhance the anthocyanin yield in suspension cultures of strawberry cells. The effect of the temperature-shift interval and the shift-time point was investigated for the optimization of this strategy. In this process, strawberry cells were grown at 30 degrees C (the optimum temperature for cell growth) for a certain period as the first stage, with the temperature shifted to a lower temperature for the second stage. In response to the temperature shift-down, anthocyanin synthesis was stimulated and a higher content could be achieved than that at both boundary temperatures but cell growth was suppressed. When the lower boundary temperature was decreased, cell growth was lowered and a delayed, sustained maximum anthocyanin content was achieved. Anthocyanin synthesis was strongly influenced by the shift-time point but cell growth was not. Consequently, the maximum anthocyanin content of 2.7 mg.g-fresh cell(-1) was obtained on day 9 by a temperature-shift from 30 degrees C, after 3-d culture, to 15 degrees C. The highest anthocyanin yield of 318 mg.L-1 on day 12 was achieved when the temperature was shifted from 30 degrees C, after 5-d culture, to 20 degrees C. For a global optimization of both the yield and productivity, the optimum anthocyanin yield and productivity of 272 mg.L-1 and 30.2 mg.L-1.d(-1) on day 9 were achieved by a two-stage culture with a temperature-shift from 30 degrees C after 3 d to 20 degrees C.